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To learn more about the nature of the semiconductor bond, see Chapter 21 in Volume 2 of the book.

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Semiconductor Bond

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Silicon Semiconductor

Animation

Animated rotational perspective of a unit cell of a silicon semiconductor. Electron planes through the lattice carry the conducting current. The electron planes behave as mirror -image negative point charges between two Si+ ions.

Calculated and experimental values for the lattice parameter, cohesive energy, and band gap of crystalline silicon. Calculations are made from exact, closed-form equations containing physical constants only.

Calc. Exp.
Lattice Parameter al () 5.37409 5.4306 [1]
Cohesive Energy (eV) 2.30204 2.3095 [2]
Band Gap (eV) 1.120 1.12 [3]

References:

1. D. R. Lide, CRC Handbook of Chemistry and Physics, 86th Edition, CRC Press, Taylor & Francis, Boca Raton, (2005-6), p. 12-18.

2. B. Farid, R. W. Godby, "Cohesive energies of crystals", Physical Review B, Vol. 43 (17), (1991), pp. 14248-14250.

3. D. R. Lide, CRC Handbook of Chemistry and Physics, 86th Edition, CRC Press, Taylor & Francis, Boca Raton, (2005-6), p. 12-82.




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