Semiconductor Bond
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Silicon Semiconductor |
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Animated rotational perspective of a unit cell
of a silicon semiconductor. Electron planes through the
lattice carry the conducting current. The electron planes
behave as mirror -image negative point charges between two Si+
ions.
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Calculated and experimental values for the lattice parameter, cohesive energy, and band gap of crystalline silicon.
Calculations are made from exact, closed-form equations containing physical
constants only.
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Calc. |
Exp. |
| Lattice Parameter al
(Å) |
5.37409 |
5.4306 [1] |
| Cohesive Energy (eV) |
2.30204 |
2.3095 [2] |
| Band Gap (eV) |
1.120 |
1.12 [3] |
References:
1. D. R. Lide, CRC Handbook of Chemistry and
Physics, 86th Edition, CRC Press, Taylor & Francis, Boca
Raton, (2005-6), p. 12-18.
2. B. Farid, R. W. Godby, "Cohesive energies of
crystals", Physical Review B, Vol. 43 (17), (1991), pp.
14248-14250.
3. D. R. Lide, CRC Handbook of Chemistry and
Physics, 86th Edition, CRC Press, Taylor & Francis, Boca
Raton, (2005-6), p. 12-82.

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