Animated rotational perspective of a unit cell
of a silicon semiconductor. Electron planes through the
lattice carry the conducting current. The electron planes
behave as mirror -image negative point charges between two Si+
ions.
Calculated and experimental values for the lattice parameter, cohesive energy, and band gap of crystalline silicon.
Calculations are made from exact, closed-form equations containing physical
constants only.
Calc.
Exp.
Lattice Parameter al
(Å)
5.37409
5.4306 [1]
Cohesive Energy (eV)
2.30204
2.3095 [2]
Band Gap (eV)
1.120
1.12 [3]
References:
1. D. R. Lide, CRC Handbook of Chemistry and
Physics, 86th Edition, CRC Press, Taylor & Francis, Boca
Raton, (2005-6), p. 12-18.
2. B. Farid, R. W. Godby, "Cohesive energies of
crystals", Physical Review B, Vol. 43 (17), (1991), pp.
14248-14250.
3. D. R. Lide, CRC Handbook of Chemistry and
Physics, 86th Edition, CRC Press, Taylor & Francis, Boca
Raton, (2005-6), p. 12-82.
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